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| MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation FR-5 Board Derate above 25OC Thermal Resistance Junction to Ambient Junction and Storage Temperature 1) 1) Value MMBTA42 MMBTA43 200 200 6 500 200 1.8 Unit V V V mA mW mW/ OC O VCBO VCEO VEBO IC Ptot 300 300 6 RJA TJ, Ts 417 -55 to +150 C/W O C FR-5 = 1 x 0.75 x 0.062 in. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 20/10/2005 MMBTA42 / MMBTA43 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=10Vdc, IC=1mA at VCE=10Vdc, IC=10mA at VCE=10Vdc,IC=30mA Collector Emitter Saturation Voltage at IC=20mA, IB=2mA Base Emitter Saturation Voltage at IC=20mA, IB=2mA Collector Cutoff Current at VCB=200V at VCB=160V Emitter Cutoff Current at VEB=6V at VEB=4V Collector Base Breakdown Voltage at IC=100A Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100A Current Gain Bandwidth Product at VCE=20V, IC=10mA, f=100MHz Collector Base Capacitance at VCB=20V, IE=0, f=1MHz MMBTA42 MMBTA43 Ccb Ccb 3 4 pF pF fT 50 MHz V(BR)EBO 6 V MMBTA42 MMBTA43 V(BR)CEO V(BR)CEO 300 200 V V MMBTA42 MMBTA43 V(BR)CBO V(BR)CBO 300 200 V V MMBTA42 MMBTA43 IEBO IEBO 0.1 0.1 A A MMBTA42 MMBTA43 ICBO ICBO 0.1 0.1 A A VBE(sat) 0.9 V MMBTA42 MMBTA43 VCE(sat) VCE(sat) 0.5 0.5 V V Both Types Both Types MMBTA42 MMBTA43 hFE hFE hFE hFE 25 40 40 40 Min. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 20/10/2005 MMBTA42 / MMBTA43 120 hFE, DC Current Gain 100 80 60 40 TJ=+125C VCE =10Vdc TJ=25C TJ=-55C 20 0 0.1 1.0 10 100 IC, Collector Current (mA) Figure 1. DC Current Gain tT, Current-Gain-Bandwidth (MHz) C, Capacitance (pF) 100 Ceb @ 1MHz 80 70 60 50 40 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE=20V f=20MHz TJ=20C 10 1 Ccb @ 1MHz 0.1 0.1 1 10 100 1000 VR, Reverse Voltage (volts) Figure 2. Capacitance Ic, Collector Current (mA) Figure 3. Current-Gain-Bandwidth 1.4 1.2 A VBE(sat) @-55C, IC/IB=10 B VBE(on) @ -55C,VCE=10V C VBE(sat) @ 125C,IC/IB=10 D VBE(sat) @ 25C,IC/IB=10 E VBE(on) @ 125C,VCE=10V F VBE(on) @ 25C,VCE=10V G VCE(sat) @ 125C,IC/IB=10 H VCE(sat) @ 25C,IC/IB=10 I VCE(sat) @ -55C,IC/IB=10 0.1 1.0 10 100 V, Voltage (volts) 1.0 0.8 0.6 0.4 0.2 0.0 IC, Collector Current (mA) Figure 4."on" Voltages SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 20/10/2005 |
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